ohmic contact
英
美
电阻（性）接触；欧姆接触
双语例句
- Reduce Ohmic Contact Resistance to p-GaN Using InGaN/ AlGaN Superlattice
用InGaN/AlGaN超晶格降低p-GaN欧姆接触电阻 - Preparation of n-type SiCN Thin Film and Investigation of Its Ohmic Contact
n型SiCN薄膜的制备及其欧姆接触特性研究 - Study on Ohmic Contact Degradation under High Current Density
大电流密度下欧姆接触退化机理的研究 - Influence of p-GaN/ Ni/ Au ohmic contact characteristics by Zn~+ implantation
Zn~+注入对p-GaN/Ni/Au欧姆接触特性的影响 - The Study on Ohmic Contact Based on GaN under High-Temperature Environment and High-Current Density Stress Conditons
高温环境及大电流密度应力下GaN基欧姆接触退化机理的研究 - Fabrication and Characteristics of Good Ohmic Contact Electrode on Thermistor by Regional Electroless Cu-plating
热敏电阻局部化学镀铜制备良好欧姆接触电极及性能研究 - The analysis of I-V characteristic and microstructure shows that the failure of device results from the gate sinking and ohmic contact degradation.
通过温度斜坡试验，对器件试验前后的I-V特性的对比分析和微结构的分析表明，欧姆接触退化和栅下沉共同导致了器件的失效。 - Ni/ Au was used as p-type ohmic contact.
采用Ni／Au作为p型欧姆接触电极。 - This is a new approach, which has a wide application future. It has been used to form a thin ultralinear junction at the interface of PtSi/ Si as well as to form a semiconductor ohmic contact.
这种技术的应用，对在PtSi/Si界面上制作超浅结和在半导体器件中制作良好的欧姆接触提供了广阔的应用前景。 - A new six-layer ohmic contact system ( Ni/ Ge/ Au/ Ge/ Ni/ Au) is proposed and its ohmic contact formation on n-type GaAs has been investigated.
研究了在砷化镓上欧姆接触形成机理，并提出了一种新型的欧姆接触六层金属系统（Ni/Ge/Au/Ge/Ni/Au）。 - Ti silicide ohmic contact and Schottky contact can be obtained at the same time in VLSI process.
在VLSI工艺中实现同时完成钛硅化物欧姆接触和肖特基势垒二极管（SBD）的制作。 - By lots of testing and analyses time after time, Ohmic contact is formed Between Au and ZnO and the related resistance is about 27 Ω.
对ZnO六棱微米管的性能进行初步探索，经过大量、反复的分析测试，证实了Au/ZnO形成的金属与半导体的接触是欧姆接触，且电阻较小，约为27Ω； - New ohmic contact structure and air-bridge are employed to improve microwave power performance.
为了提高微波功率器件性能，采用新的欧姆接触和新型空气桥方案。 - Influence of the ohmic contact technologies of a solar cell on its shunt resistance
太阳电池电极工艺对其并联电阻和影响 - The Ni-based Ohmic contact to n-type SiC is studied.
对n型SiC的Ni基欧姆接触的机理进行了研究。 - To do this, By use of the experiments, the optimum technological conditions are obtained. The ohmic contact resistance has been lowered to below 0.06 Ω.
为此，在进行了大量的实验后，找到了降低欧姆接触电阻的最佳工艺条件，获得了小于0.06Ω的最低电阻。 - According to the thickness of the material, it classify the measurement of specific contact resistance in ohmic contact between the metal-semiconductor, and introduce the principle of variety methods.
根据材料的厚度对金属-半导体间的欧姆接触电阻率的测量方法做了分类，并分别介绍了各种方法的原理。 - Study on the Ohmic Contact for p-Type Diamond
p型金刚石欧姆接触的研究 - Ohmic contact is one of the fundamental requirements for GaN detectors with high performance.
实现欧姆接触是获得高性能GaN探测器的基本要求之一。 - Ohmic contact is a critical factor for high power semiconductor lasers.
欧姆接触的好坏，对高功率半导体激光器至关重要。 - To obtain ohmic contact to n-GaN with a low contact resistivity, Cr/ Au/ Ni/ Au metallic system that was fabricated in n-GaN materials has been developed. The contact resistivity of ohmic contact was tested and analyzed at different temperatures.
为了获得n-GaN的低接触电阻的欧姆接触，采用Cr/Au/Ni/Au金属化系统与n&GaN形成欧姆接触，并对其不同温度下的接触电阻率进行了测试分析。 - The Ohmic contact and photoresponse of a ZnO single crystal film produced by MOCVD are investigated. The electrical and photoresponsive changes in the ZnO film due to the RF sputter deposition of SiO_2 ( antireflective coating) are also discussed.
对采用MOCVD方法沉积的ZnO单晶薄膜的欧姆接触特性、光电特性进行了研究，并对比研究了射频溅射沉积SiO2抗反射膜对ZnO薄膜I-V、光电特性的影响。 - Diffusion Barrier Layer in Ohmic Contact of Semiconductor Devices
半导体器件欧姆接触中的扩散阻挡层 - Cold Gas Dynamic Spray processes for the ohmic contact between Al electrode and PTC ceramics are studied. Microstructural analysis of Al electrode has been preformed by SEM techniques.
研究了冷气动力喷涂方法（CGDS）制备PTC陶瓷欧姆接触Al电极的喷涂工艺，用扫描电子显微镜分析了电极的显微结构。 - The interface property of Au/ Zn/ Au/ p-InP ohmic contact fabricated by ion beam sputtering was studied.
研究了离子束溅射制备的Au/Zn/Au/p-InP欧姆接触的界面特性。 - The ohmic contact based on low doped p-silicon was investigated.
研究了基于低掺杂的p型硅的欧姆接触制备，分析了Al/p-Si欧姆接触特性。 - In order to make the application in the device better, the ohmic contact with low resistance between the electrode and p-type and n-type ZnO films needs to be studied and prepared.
为了更好的实现其在器件方面的应用，需研究制备出适合于p型和n型ZnO薄膜的低阻欧姆接触电极。 - Ohmic contact is not only related to the variety of electrode materials, but also effected by semiconductor surface states.
欧姆接触不仅与电极材料的种类有关，还受半导体表面态的影响。 - Electrode contact properties and mechanisms between diamond and metals were investigated. The optimal process of Cr/ Au deposition as ohmic contact was obtained.
研究了金刚石与金属的接触特性，分析了金刚石与金属形成欧姆接触的机理，并获得了沉积Cr／Au作为欧姆接触的最佳工艺。 - Test results of C-AFM shows that the probe and Pt thin film belong to the ohmic contact.
导电原子力的测试结果说明探针与Pt薄膜之间属于欧姆接触。